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Bulletin I25186 rev. B 04/00
ST303C..L SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capibility Low thermal impedance High speed performance
Hockey Puk Version
515A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq range (*) TJ
ST303C..L
515 55 995 25 7950 8320 316 289 400 to 1200 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
(*) tq = 10 to 20s for 400 to 800V devices tq = 15 to 30s for 1000 to 1200V devices
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ST303C..L Series
Bulletin I25186 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 ST303C..L 08 10 12
VDRM /VRRM , maximum repetitive peak voltage V
400 800 1000 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1130 1010 680 230 50 VDRM 50 40
ITM 180 el
o
ITM 100s 1540 1570 1300 510 50 VDRM 55 5660 2830 1490 540 50 V DRM 40
ITM
Units
950 820 530 140 50 50 55
1800 1850 1560 690 50 40
4990 2420 1220 390 50 55
A
V A/s C
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST303C..L
515 (190) 55 (85) 995 7950 8320 6690 7000
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2 t for fusing
316 289 224 204 KA2 s
t = 10ms t = 8.3ms
I 2 t
Maximum I2 t for fusing
3160
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST303C..L Series
Bulletin I25186 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST303C..L Units
2.16 1.44 1.48 0.57 m 0.56 600 1000 mA V
Conditions
ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r Low level value of forward slope resistance
t2
IH IL
High level value of forward slope resistance Maximum holding current Typical atching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST303C..L Units
1000 0.83 Min 10
q
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
A/s
Typical delay time Max. turn-off time (*)
q
tq
Max 30
s
(*) t = 10 to 20s for 400 to 800V devices; t = 15 to 30s for 1000 to 1200V devices.
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST303C..L
500 50
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request T J = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST303C..L Units
60 10 10 20 V W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
T J = TJ max, tp 5ms
5 200 3 20 0.25 mA T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST303C..L Series
Bulletin I25186 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST303C..L
-40 to 125 -40 to 150 0.11 0.05 0.011 0.005 9800 (1000)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
250
TO - 200AC (B-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
Single Side Double Side 0.012 0.014 0.018 0.026 0.045 0.010 0.015 0.018 0.027 0.046
Rectangular conduction
Single Side Double Side 0.008 0.014 0.019 0.027 0.046 0.008 0.014 0.019 0.028 0.046
Units
Conditions
TJ = TJ max.
K/W
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
30
2
3
3
C
4
12
5
L
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
t q(s) dv/dt (V/s) 20 10 CN 12 CM up to 800V 15 CL 20 CK CL CP CK CJ -50 DN DM DL DK -DP DK DJ DH 100 EN EM EL EK --EK EJ EH 200 FN * FM FL * FK * 400 HN HM HL HK
15 t q(s) 18 only for 20 1000/1200V 25 30
----FK * HK FJ * HJ FH HH
*Standard part number.
All other types available only on request.
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ST303C..L Series
Bulletin I25186 rev. B 04/00
Outline Table
0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 2 7 (1 . 0 6 ) M A X .
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20 5 5 8 .5 (2 .3 ) D I A . M AX . 4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
M a xim u m A llo w a ble H e a t sin k T e m p e rat u re ( C )
M axim u m A llo w a ble H e a t sin k Te m p e ra tu r e ( C )
1 30 1 20 1 10 1 00 90 80 70 60 50 40 0 50 1 00
130 120 110 100 90 80 70 60 50 40 30 20 0 1 00 30
S T 3 0 3 C ..L S e rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .1 1 K / W
ST 3 0 3 C ..L S e rie s (Sin gle S id e C o o le d ) R th J-hs (D C ) = 0 .1 1 K / W
C o nduc tion A ng le
C o ndu c tio n Pe rio d
30 60 90 1 20 180
60 9 0 120 18 0 2 00 300 4 00 DC 50 0 60 0
15 0
2 00
2 50
300
35 0
A v e ra g e O n -st a te C u rr e n t (A )
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n -st a t e C urr e n t (A )
Fig. 2 - Current Ratings Characteristics
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ST303C..L Series
Bulletin I25186 rev. B 04/00
M a x im u m A llo w a b le He a t sin k T e m p e ra t u re ( C ) M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (C ) 130 120 110 100 90 80 70 60 50 40 30 0 100 20 0 300 4 00 50 0 600 70 0 A v e ra g e O n - st a te C u rr e n t (A )
Fig. 3 - Current Ratings Characteristics
Co n duc tion Ang le
ST 3 0 3 C ..L Se rie s (D o ub le S id e C o o le d ) R thJ -hs (D C ) = 0 .0 5 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0 20 0 40 0 30 60 90
ST 3 0 3 C ..L Se rie s (D o u b le S id e C o o le d ) R th J- hs (D C ) = 0 .0 5 K /W
C o nduc tio n Pe rio d
30
60
9 0 120 180
1 20 180 DC 60 0 80 0 1 0 00 1 2 00
A v e ra g e O n -st a te C urre n t (A )
Fig. 4 - Current Ratings Characteristics
Maximum Average O n-state Pow er Loss (W )
M a x im u m A v e ra g e O n -st a t e P o w e r Lo s s (W )
2 0 00 1 8 00 1 6 00 1 4 00 1 2 00 1 0 00 80 0 60 0 40 0 20 0 0 0 10 0 20 0 3 0 0 40 0 5 0 0 6 0 0 7 00 8 00 A v e ra g e O n - sta t e C u rre n t ( A )
Fig. 5 - On-state Power Loss Characteristics
Co n duc tio n A ng le
180 120 9 0 6 0 3 0 R M S Lim it
ST 3 0 3 C ..L S e rie s T J = 1 2 5 C
2600 2400 DC 180 2200 120 2000 90 1800 60 1600 30 1400 1200 RMS Limit 1000 800 600 400 200 0 0 200 400
C o ndu ctio n P e rio d
ST303C..L Series TJ = 125C 600 800 1000 1200
Average On -state Curren t (A)
Fig. 6 - On-state Power Loss Characteristics
Peak Half Sin e Wa ve O n-state Current (A)
6500 6000 5500 5000 4500 4000 3500 3000 1
At An y Rated L oad Con dition And W ith Rated VRRM Applied Followin g Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
P e a k H a lf S in e W a v e O n -st a te C u rre n t (A )
7000
8000 7500
M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e r su s P u lse T ra in D ura t io n . C o n tro l O f C o n d u c tio n M a y N o t B e M a in t a in e d . 7000 In it ia l T J = 1 2 5 C N o V o lt a g e R e a pp lie d 6500 R a te d V RRM R e a p p lie d 6000 5500 5000 4500 4000 3500 S T 3 0 3 C ..L S e rie s 0.1 P u ls e Tr a in D u ra t io n (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
ST303C..L Series
10
100
3000 0.01
1
N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
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ST303C..L Series
Bulletin I25186 rev. B 04/00
T ra n sie n t T h e rm a l Im p e d a n c e Z th J-hs (K / W ) 10000 Instantaneous On-state Current (A) 1
S t e a d y S ta t e V a lu e R th J- hs = 0 .1 1 K / W (S in gle S id e C o o le d ) R th J-hs = 0 .0 5 K / W 0 .1 (D o u b le S id e C o o le d ) (D C O p e ra t io n )
1000 TJ = 25C TJ = 125C ST303C..L Series 100 0 1 2 3 4 5 6 7 8 Instantan eous O n-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0 .0 1 S T 3 0 3 C ..L S e rie s 0 .0 0 1 0 .0 0 1
0 .0 1
0 .1
1
10
Sq u a re W a v e P u lse D u ra tio n (s )
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
M axim um Reverse Recovery Charge - Q rr (C)
M a xim u m R e v e rse R e c o v e ry C ur re n t - I rr (A )
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate O f Fa ll O f On -state Current - di/dt (A/s)
Fig. 11 - Reverse Recovered Charge Characteristics
I TM = 1 00 0 A 5 00 A 3 00 A 2 00 A 1 00 A
ST303C..L Series TJ = 125 C
18 0 17 0 16 0 15 0 14 0 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 10
I TM = 10 00 A 5 00 A 3 00 A 20 0 A 10 0 A
S T 3 0 3 C ..L S e rie s TJ = 125 C
20
30
40
50
60
70
80
9 0 10 0
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / s)
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
P e a k O n -s ta te C u rr e n t (A )
1 000 1 50 0
200 50 0 400
100
50 Hz 10 00 5 00
40 0 20 0
10 0 5 0 H z
1 E3
20 0 0 2 50 0 30 00 tp
Sn ubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80% V DR M ST303 C. .L Serie s Sinuso ida l pulse T C = 40 C
15 00 20 00 25 00 3 00 0 tp
Sn ubbe r c ircu it R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V DR M ST303 C. .L Se ries Sinuso ida l p ulse T C = 55 C
1 E2 1 E1
1 E2
1 E3
1E 1E 1E4 4 E1 1
1 E2
1 E3
1 E4
P u lse Ba se w id t h ( s)
Fig. 13 - Frequency Characteristics
P u lse Ba se w id t h ( s)
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ST303C..L Series
Bulletin I25186 rev. B 04/00
1E 4
Snub ber c irc uit R s = 10 o hm s C s = 0 .47 F V D = 8 0% V D R M Snu bbe r c irc uit R s = 10 oh m s C s = 0 .47 F V D = 8 0% V DR M 1 000 1 50 0 20 00 2 50 0 ST3 03 C.. L Serie s Trap ezo id al p ulse TC = 40 C di/d t = 50 A/s 30 0 0 tp ST30 3C ..L Se ries Tra pe zoidal pulse T C = 55C di/dt = 5 0A /s 500 40 0 20 0 100 50 H z
Pe a k O n -st a t e C u r re n t (A )
1E 3
1 50 0 20 0 0 2 50 0
500 100 0
50 Hz 40 0 20 0 10 0
1E 2
3 00 0
tp
1E 1 1 E1
1 E2
1 E3
1 E 4 41 E 1 1 1 E 1E
1E 2
1 E3
1E4
Pu lse B a se w id th ( s)
Fig. 14 - Frequency Characteristics
P u lse Ba se w id t h ( s)
1E4
Snub be r c irc uit R s = 10 o hm s C s = 0 .47 F V D = 8 0% V D R M Snu bbe r c irc uit R s = 1 0 o hm s C s = 0.47 F V D = 80% V D RM 50 0 1 0 00 1 5 00 20 00 2 50 0 ST30 3C ..L Se ries Trapezo idal pulse TC = 4 0C di/dt = 1 00 A/s 3 0 00 ST303 C.. L Serie s Tra pezo id al p ulse T C = 5 5C di/dt = 10 0A /s 40 0 20 0 1 00 50 Hz
P e a k O n - st a t e C u rre n t (A )
1E3
1 50 0 2 00 0 2 50 0
1 000
50 0
400
200
10 0
50 Hz
1E2
30 0 0
tp
tp
1E1 1 E1
1 E2
1 E3
1E 1 E14E 41 E 1 1
1E2
1 E3
1E4
P u lse B ase w id t h ( s)
Fig. 15 - Frequency Characteristics
Pu lse B a se w id th ( s)
1E 5
ST3 03C ..L Se ries Rec tang ula r pulse di/dt = 5 0A /s 20 jo ules pe r pulse 10
P e a k O n -st a t e C u rre n t (A )
1E 4
2 3 5 10
tp 20 jo ules pe r pulse
5 3 2 1 0. 5 0. 4
1E 3
0 .5 0 .4
1
1E 2
ST30 3C ..L Se ries Sin uso idal pulse
tp
1E 1 1E1
1E2
1E3
1 1 E 4E 41 E 1 1 1E
1 E2
1 E3
1E4
P u lse B ase w id t h ( s)
Pu lse B a se w id t h (s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ST303C..L Series
Bulletin I25186 rev. B 04/00
100 Instantaneous Gate Voltage (V)
10
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001
(1)
(2) (3) (4)
Device: ST303C..L Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
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